標題: Plasmonic Green Nanolaser Based on a Metal-Oxide-Semiconductor Structure
作者: Wu, Chen-Ying
Kuo, Cheng-Tai
Wang, Chun-Yuan
He, Chieh-Lun
Lin, Meng-Hsien
Ahn, Hyeyoung
Gwo, Shangjr
光電工程學系
Department of Photonics
關鍵字: Plasmonic nanolaser;surface plasmon polariton;indium gallium nitride;nanorod
公開日期: 1-十月-2011
摘要: Realization of smaller and faster coherent light sources is critically important for the emerging applications in nanophotonics and information technology. Semiconductor lasers are arguably the most suitable candidate for such purposes. However, the minimum size of conventional semiconductor lasers utilizing dielectric optical cavities for sustaining laser oscillation is ultimately governed by the diffraction limit (similar to(lambda/2n)(3) for three-dimensional (3D) cavities, where lambda is the free-space wavelength and n is the refractive index). Here, we demonstrate the 3D subdiffraction-limited laser operation in the green spectral region based on a metal oxide semiconductor (MOS) structure, comprising a bundle of green-emitting InGaN/GaN nanorods strongly coupled to a gold plate through a SiO(2) dielectric nanogap layer. In this plasmonic nanocavity structure, the analogue of MOS-type "nanocapacitor" in nanoelectronics leads to the confinement of the plasmonic field into a 3D mode volume of 8.0 x 10(-4) mu m(3) (similar to 0.14(lambda/2n)(3)).
URI: http://dx.doi.org/10.1021/nl2022477
http://hdl.handle.net/11536/14775
ISSN: 1530-6984
DOI: 10.1021/nl2022477
期刊: NANO LETTERS
Volume: 11
Issue: 10
起始頁: 4256
結束頁: 4260
顯示於類別:期刊論文


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  1. 000295667000039.pdf