|標題:||Electrical characterization and Raman spectroscopy of individual vanadium pentoxide nanowire|
|作者:||Shen, W. -J.|
Sun, K. W.
Lee, C. S.
Department of Applied Chemistry
|關鍵字:||Dielectrophoresis;Metal oxide;Phase transition;Nanowire|
|摘要:||We measured I-V characteristics, electrical resistance, and Raman spectra in the temperature range from room temperature to above 600 K to obtain nanodevices. Measurements were taken on a single V(2)O(5) nanowire deposited on a Si template, where two- and four-point metallic contacts were previously made using e-beam lithography. In both two- and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V(2)O(5) to VO(2)/V(2)O(3) phases took place at a temperature as low as 500 K, when electrons were injected to the nanowire through electrical contacts.|
|期刊:||JOURNAL OF NANOPARTICLE RESEARCH|
|Appears in Collections:||Articles|
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