標題: High quality quantum dots fabricated by molecular beam epitaxy
作者: Lee, CP
Liu, DC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-1996
摘要: Damage free quantum dots have been fabricated directly using molecular beam epitaxy. Excellent photoluminescence has been obtained and is attributed to the absence of the non-radiative recombination centers and the enhanced oscillator strength for exciton recombination due to the confinement of quantum dots. The size variation of the quantum dots has been estimated from the width of the emission peak of low temperature photoluminescence (PL). A variation of only +/- 10 Angstrom is obtained. The existence of the quantum dots has also been verified directly from the image of the dots using atomic force microscopy. The image sizes of the quantum dots agree with that estimated from the PL blue shift.
URI: http://dx.doi.org/10.1016/0169-4332(95)00288-X
http://hdl.handle.net/11536/1477
ISSN: 0169-4332
DOI: 10.1016/0169-4332(95)00288-X
期刊: APPLIED SURFACE SCIENCE
Volume: 92
Issue: 
起始頁: 519
結束頁: 525
顯示於類別:會議論文


文件中的檔案:

  1. A1996UG56100096.pdf