標題: Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films
作者: Wang, FS
Tsai, MJ
Lai, WK
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-1996
摘要: The dopant activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous silicon (cu-Si) films, furnace-annealed with different annealing temperatures has been investigated. For the arsenic-implanted specimens with a dosage of 4 x 10(14) cm(-2), an increase of sheet resistance was observed with increasing annealing temperature for the temperatures range from 700 to 850 degrees C. The reverse annealing phenomenon is attributed to dopant segregation at grain boundaries and becomes less marked with heavier doped films (2 x 10(15) cm(-2)). Consequently for a dosage of 1 x 10(16) cm(-2), the sheet resistance exhibits a monotonic decrease with increasing annealing temperature. As for the boron-implanted specimens, the reverse annealing phenomenon is not observed. It means that dopant segregation is not significant for boron-implanted films.
URI: http://dx.doi.org/10.1016/0169-4332(95)00258-8
http://hdl.handle.net/11536/1476
ISSN: 0169-4332
DOI: 10.1016/0169-4332(95)00258-8
期刊: APPLIED SURFACE SCIENCE
Volume: 92
Issue: 
起始頁: 372
結束頁: 377
Appears in Collections:Conferences Paper


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