標題: Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
作者: Chang, TC
Yeh, WK
Chang, CY
Jung, TG
Tsai, WC
Huang, GW
Mei, YJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-1996
摘要: A series of Si/Si1-xGex disordered superlattices with various degrees of disorder were grown in an ultrahigh vacuum chemical vapor deposition system (UHV/CVD). High-resolution double-crystal X-ray diffraction (HRXRD), and conventional cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical X-ray simulation program was employed to analyze the experimental rocking curves, Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various degrees of disorder.
URI: http://dx.doi.org/10.1016/0169-4332(95)00213-8
http://hdl.handle.net/11536/1474
ISSN: 0169-4332
DOI: 10.1016/0169-4332(95)00213-8
期刊: APPLIED SURFACE SCIENCE
Volume: 92
Issue: 
起始頁: 119
結束頁: 123
Appears in Collections:Conferences Paper


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