標題: Hydrogen etching of GaN and its application to produce free-standing GaN thick films
作者: Yeh, Yen-Hsien
Chen, Kuei-Ming
Wu, Yin-Hao
Hsu, Ying-Chia
Yu, Tzu-Yi
Lee, Wei-I
電子物理學系
Department of Electrophysics
關鍵字: Hydrogen etching;Surface processes;Surface structure;Hydride vapor phase epitaxy;Nitrides;Semiconducting III-V materials
公開日期: 15-Oct-2011
摘要: This work investigates the morphology of GaN etched in hydrogen (H(2)) at different temperatures, the activation energies of the rate-limiting steps of H(2) etching, and the overgrowth on a H(2)-etched GaN template. The surfaces of GaN have different profiles after being etched in H(2); they resemble a plane decorated with columns and mooring posts in a low-temperature etching condition, and with deep cavities in a high-temperature etching condition. The etched profiles show that H(2) etching has controllable etching directions: vertical and lateral. In a low-temperature condition, H(2) etching has both vertical and lateral etching directions; however, in a high-temperature condition, it has only the vertical etching direction. The activation energies of the rate-limiting steps under etching pressures of 100 and 700 Torr are estimated to be 3.22 and 3.77 eV, respectively. A thick GaN layer has been grown on a H2-etched GaN template, and it has self-separated from the underlying sapphire substrate. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2011.08.022
http://hdl.handle.net/11536/14736
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.08.022
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 333
Issue: 1
起始頁: 16
結束頁: 19
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