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dc.contributor.authorProtasov, Dmitry Yu.en_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorSvit, Kirill A.en_US
dc.contributor.authorDuda, Tatyana A.en_US
dc.contributor.authorTeys, Sergei A.en_US
dc.contributor.authorKozhuhov, Anton S.en_US
dc.contributor.authorSveshnikova, Larisa L.en_US
dc.contributor.authorZhuravlev, Konstantin S.en_US
dc.date.accessioned2014-12-08T15:20:42Z-
dc.date.available2014-12-08T15:20:42Z-
dc.date.issued2011-10-20en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp206816fen_US
dc.identifier.urihttp://hdl.handle.net/11536/14730-
dc.description.abstractAggregation clusters of CdS quantum dots (QDs) on the highly ordered pyrolytic graphite substrate were investigated by atomic force microscopy and scanning tunneling microscopy. QDs were initially formed within Y-type Langmuir-Blodgett (LB) films of cadmium behenate. The LB matrix was then removed by annealing. To study the process of QD assembly, the density of QDs in the initial film was varied systematically by increasing the number of monolayers (MLs) 0 from 1 to 20 ML. It was found that, at a small LB ML number, only a small part of CdS molecules form into QDs by diffusion along the plane of LB layers. With an increase of the LB ML number, the interlayer diffusion arises that leads to almost full binding of CdS molecules into QDs. The individually standing QDs were formed on the substrate for 1 and 2 ML samples. The QD size distributions of the samples with a small ML number are broader than that predicted by the two-dimensional Lifshitz-Slezov diffusion model. With an increase of the LB matrix thickness, QDs begin to assemble into clusters, revealing a ribbon structure due to diffusion-limited aggregation, and for the 20 ML LB matrix, a submonolayer QD film arises. By analyzing the occurrence of QDs as a function of aggregation number, pair bondings were estimated to be about 34 and 62 meV for the 4 and 8 ML samples, respectively.en_US
dc.language.isoen_USen_US
dc.titleFormation of Arrays of Free-Standing CdS Quantum Dots Using the Langmuir-Blodgett Techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp206816fen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.issue41en_US
dc.citation.spage20148en_US
dc.citation.epage20152en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000295700800014-
dc.citation.woscount8-
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