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dc.contributor.authorChen, Yi-Juen_US
dc.contributor.authorTsui, Bing-Yueen_US
dc.date.accessioned2018-08-21T05:57:09Z-
dc.date.available2018-08-21T05:57:09Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/147108-
dc.description.abstractEffects of vanadium incorporation on the electron Schottky barrier height reduction of NiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment.en_US
dc.language.isoen_USen_US
dc.subjectGermaniumen_US
dc.subjectSchottky barrier heighten_US
dc.subjectvanadiumen_US
dc.titleEffects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Geen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000426985900156en_US
Appears in Collections:Conferences Paper