標題: Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
作者: Liao, Yu-Sheng
Lin, Gong-Ru
Kuo, Hao-Chung
Feng, Milton
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: metamorphic;In0.53Ga0.47As;InGaP;GaAs;p-i-n photodiode;receiver;high-power photodiode
公開日期: 1-Jan-2006
摘要: A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4.10(-15) W/Hz(1/2), and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA center dot GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz center dot A/W) have been achieved.
URI: http://dx.doi.org/10.1117/12.645859
http://hdl.handle.net/11536/147010
ISBN: 0-8194-6161-X
ISSN: 0277-786X
DOI: 10.1117/12.645859
期刊: SEMICONDUCTOR PHOTODETECTORS III
Volume: 6119
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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