標題: pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures
作者: Yang, Po-Yu
Wang, Jyh-Liang
Chiu, Po-Chun
Chou, Jung-Chuan
Chen, Cheng-Wei
Li, Hung-Hsien
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Al-doped zinc oxide (AZO);extended-gate field-effect transistor (EGFET);hydrothermal method;low temperature
公開日期: 1-十一月-2011
摘要: The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85 degrees C. The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.
URI: http://dx.doi.org/10.1109/LED.2011.2164230
http://hdl.handle.net/11536/14696
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2164230
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 11
起始頁: 1603
結束頁: 1605
顯示於類別:期刊論文


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  1. 000296239500045.pdf