標題: Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics
作者: Tsui, Bing-Yue
Li, Po-Hsueh
Yen, Chih-Chan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Border traps;extreme ultraviolet (EUV);high-dielectric-constant dielectrics;hole traps;interface states
公開日期: 1-十一月-2011
摘要: Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al 2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO(2). The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.
URI: http://dx.doi.org/10.1109/LED.2011.2165521
http://hdl.handle.net/11536/14695
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2165521
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 11
起始頁: 1594
結束頁: 1596
顯示於類別:期刊論文


文件中的檔案:

  1. 000296239500042.pdf