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dc.contributor.authorChen, Wei-Tsungen_US
dc.contributor.authorLo, Shih-Yien_US
dc.contributor.authorKao, Shih-Chinen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.contributor.authorLin, Jian-Hongen_US
dc.contributor.authorFang, Chun-Hsiangen_US
dc.contributor.authorLee, Chung-Chunen_US
dc.date.accessioned2014-12-08T15:20:40Z-
dc.date.available2014-12-08T15:20:40Z-
dc.date.issued2011-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2165694en_US
dc.identifier.urihttp://hdl.handle.net/11536/14694-
dc.description.abstractThis letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 x 10(4) and 371 x 10(4) s, respectively, is achieved by annealing and passivation.en_US
dc.language.isoen_USen_US
dc.subjectBias stressen_US
dc.subjectIGZOen_US
dc.subjectstabilityen_US
dc.titleOxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2165694en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue11en_US
dc.citation.spage1552en_US
dc.citation.epage1554en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000296239500028-
dc.citation.woscount34-
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