標題: Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors
作者: Chen, Wei-Tsung
Lo, Shih-Yi
Kao, Shih-Chin
Zan, Hsiao-Wen
Tsai, Chuang-Chuang
Lin, Jian-Hong
Fang, Chun-Hsiang
Lee, Chung-Chun
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Bias stress;IGZO;stability
公開日期: 1-Nov-2011
摘要: This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 x 10(4) and 371 x 10(4) s, respectively, is achieved by annealing and passivation.
URI: http://dx.doi.org/10.1109/LED.2011.2165694
http://hdl.handle.net/11536/14694
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2165694
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 11
起始頁: 1552
結束頁: 1554
Appears in Collections:Articles


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