標題: High Transmittance and Broaden Bandwidth through the Morphology of Anti-Reflective Layers on THz Polarizer with Si Substrate
作者: Chi, Nai-Chen
Yu, Ting-Yang
Tsai, Hsin-Cheng
Wang, Shiang-Yu
Luo, Chih-Wei
Chen, Kuan-Neng
電子物理學系
電子工程學系及電子研究所
奈米科學及工程學士學位學程
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Undergraduate Honors Program of Nano Science and Engineering
關鍵字: THz Polarizer;wire-grid;DRIE;wafer bonding
公開日期: 1-Jan-2017
摘要: To improve the transmittance of THz component and overcome the difficulties of fragile structure as well as ensuring precise alignment of existing methods, a new method involving the mature 3DIC through-silicon via (TSV) technology has been proposed to make anti-reflection layer with suitable effective refractive index based on the robustness of Si wafer. Cu wire-grid polarizers were also fabricated on wafer. The THz polarizers were completed after wafer bonding with Cu sealing ring and In/Sn guard ring. Not only the new method is easier for production with better performance, but also the silicon substrate has several advantages. The novel method has proven that THz optical component could be constructed with a nearly 100% transmittance, or widened the transmittance spectrum range from 0.5 to 2 THz when transmittances is sacrificed to 70% instead of a near 100%. Furthermore, a robust structure could also be expected with broadband transmission and excellent extinction ratio. It is properly optimized for mass production because the fabrication method could be easily done and does not required high cost.
URI: http://dx.doi.org/10.1117/12.2265392
http://hdl.handle.net/11536/146751
ISBN: 978-1-5106-0985-3; 978-1-5106-0986-0
ISSN: 0277-786X
DOI: 10.1117/12.2265392
期刊: INTEGRATED OPTICS: PHYSICS AND SIMULATIONS III
Volume: 10242
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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