|標題:||High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations|
Bowers, J. E.
Department of Photonics
|摘要:||By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 mu m wave length operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7 mu A at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.|
|期刊:||2016 IEEE PHOTONICS CONFERENCE (IPC)|
|Appears in Collections:||Conferences Paper|