標題: Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection
作者: Huang, Feng-Wen
Sheu, Jinn-Kong
Lee, Ming-Lun
Tu, Shang-Ju
Lai, Wei-Chih
Tsai, Wen-Che
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
公開日期: 7-十一月-2011
摘要: Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of similar to 450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model. (C) 2011 Optical Society of America
URI: http://hdl.handle.net/11536/14661
ISSN: 1094-4087
期刊: OPTICS EXPRESS
Volume: 19
Issue: 23
起始頁: A1211
結束頁: A1218
顯示於類別:期刊論文