|標題:||A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliability|
Lai, E. K.
Lee, M. D.
Pan, C. L.
Yao, Y. D.
Hsieh, K. Y.
Lu, C. Y.
Department of Materials Science and Engineering
|摘要:||WOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics . The simple memory is completely self-aligned, requiring no additional masks and has a small 6F(2) cell size. In this work we introduce a graded oxide device that is highly reliable (250 degrees C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.|
|期刊:||2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS|
|Appears in Collections:||Conferences Paper|