Title: Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes
Authors: Wang, Yu-Shou
Chen, Nai-Chuan
Lu, Chun-Yi
Chen, Jenn-Fang
電子物理學系
Department of Electrophysics
Keywords: InGaN/GaN;Light-emitting diodes (LEDs);Piezoelectric;Localized states;Carrier screening
Issue Date: 15-Nov-2011
Abstract: The optical joint densities of states of three InGaN/GaN-based light-emitting diodes with different emission wavelengths (violet, blue and green) operated at various currents were investigated. The results indicate that the blueshift of the emission with increasing current is related to the variation in optical joint density of states. Thus, the blueshift is ascribed to the screening of the piezoelectric field by carriers. A tail at the low-energy end of the density of states, corresponding to localized states, was found, and the presence of these tails broadens the spectra of the devices. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.physb.2011.08.071
http://hdl.handle.net/11536/14651
ISSN: 0921-4526
DOI: 10.1016/j.physb.2011.08.071
Journal: PHYSICA B-CONDENSED MATTER
Volume: 406
Issue: 22
Begin Page: 4300
End Page: 4303
Appears in Collections:Articles


Files in This Item:

  1. 000296019800025.pdf