標題: Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers
作者: Chen, Bo-Chun
Chang, Chun-Yen
Fu, Yi-Keng
Huang, Kai-Feng
Lu, Yu-Hsuan
Su, Yan-Kuin
電子物理學系
Department of Electrophysics
關鍵字: Efficiency droop;internal quantum efficiency;light-emitting diodes (LEDs)
公開日期: 15-十一月-2011
摘要: In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compared with the sample with unique 9-nm-thick barriers. A numerical study is executed to analyze the hole distributions in the quantum wells. From the simulated results, it is found that the hole injection efficiency can be improved at high injection current. Hence, the effective recombination of electron and hole is also enhanced at high injection current.
URI: http://dx.doi.org/10.1109/LPT.2011.2166540
http://hdl.handle.net/11536/14650
ISSN: 1041-1135
DOI: 10.1109/LPT.2011.2166540
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 23
Issue: 22
起始頁: 1682
結束頁: 1684
顯示於類別:期刊論文


文件中的檔案:

  1. 000296102900012.pdf