Title: Effects of post-annealing on the structural and nanomechanical properties of Ga-doped ZnO thin films deposited on glass substrate by rf-magnetron sputtering
Authors: Wang, Szu-Ko
Lin, Ting-Chun
Jian, Sheng-Rui
Juang, Jenh-Yih
Jang, Jason S. -C.
Tseng, Jiun-Yi
Department of Electrophysics
Keywords: ZnO:Ga thin films;XRD;AFM;Nanoindentation;Hardness
Issue Date: 15-Nov-2011
Abstract: In this study, the effects of post-annealing on the structure, surface morphology and nanomechanical properties of ZnO thin films doped with a nominal concentration of 3 at.% Ga (ZnO:Ga) are investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) and nanoindentation techniques. The ZnO:Ga thin films were deposited on the glass substrates at room temperature by radio frequency magnetron sputtering. Results revealed that the as-deposited ZnO:Ga thin films were polycrystalline albeit the low deposition temperature. Post-annealing carried out at 300, 400 and 500 degrees C, respectively, has resulted in progressive increase in both the average grain size and the surface roughness of the ZnO:Ga thin film, in addition to the improved thin films crystallinity. Moreover, the hardness and Young's modulus of ZnO:Ga thin films are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The hardness and Young's modulus of ZnO:Ga thin films increased as the annealing temperature increased from 300 to 500 degrees C, with the best results being obtained at 500 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2011.09.088
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2011.09.088
Volume: 258
Issue: 3
Begin Page: 1261
End Page: 1266
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