|標題:||Low threshold current, low resistance 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE|
Lai, Fang-, I
Chang, Y. H.
Yang, Hong-Pin D.
Institute of EO Enginerring
|關鍵字:||1.3 u mu;InAs-InGaAs;quantum dot;VCSEL;fully doped DBR;MBE|
|摘要:||The processing technology of 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 mu m oxide-confined aperture are 0.7mA, which correspond to 890A/cm(2) threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 M. The series resistance is 85 Omega which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.|
|期刊:||VERTICAL - CAVITY SURFACE - EMITTING LASERS XI|
|Appears in Collections:||Conferences Paper|
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