標題: Low threshold current, low resistance 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE
作者: Yu, Hsin-Chieh
Wang, Jyh-Shyang
Su, Yan-Kuin
Chang, Shoou-Jinn
Kuo, Hao-Chung
Lai, Fang-, I
Chang, Y. H.
Yang, Hong-Pin D.
光電工程研究所
Institute of EO Enginerring
關鍵字: 1.3 u mu;InAs-InGaAs;quantum dot;VCSEL;fully doped DBR;MBE
公開日期: 1-Jan-2007
摘要: The processing technology of 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 mu m oxide-confined aperture are 0.7mA, which correspond to 890A/cm(2) threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 M. The series resistance is 85 Omega which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.
URI: http://dx.doi.org/10.1117/12.697732
http://hdl.handle.net/11536/146444
ISBN: 978-0-8194-6597-9
ISSN: 0277-786X
DOI: 10.1117/12.697732
期刊: VERTICAL - CAVITY SURFACE - EMITTING LASERS XI
Volume: 6484
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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