|標題:||Influence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-Film Solar Cell Application|
|作者:||Wang, C. M.|
Huang, Y. T.
Yen, K. H.
Hsu, H. J.
Hsu, C. H.
Zan, H. W.
Tsai, C. C.
Department of Photonics
|摘要:||In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.|
|期刊:||AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010|
|Appears in Collections:||Conferences Paper|