|標題:||Surface Potential and Electric Field Mapping of p-well/n-well Junction by Secondary Electron Potential Contrast and in-situ Nanoprobe biasing|
Wang, M. H.
Lin, Y. T.
Huan, Y. S.
Institute of Display
|摘要:||This study investigates the p-well/n-well junction by using secondary electron potential contrast (SEPC) with in-situ nanoprobe biasing. Experimental result demonstrated dopant contrast is restored after applying electricity in the junction nodes. Furthermore, the image contrast was converted to a voltage scale, allowing the junction surface potential and electric filed distribution to be identified. The proposed method demonstrates that an in-situ nanoprobe system is powerful in dopant area inspection in SEM, potentially contributing to an efficient method in analyzing site-specific failure in real circuits.|
|期刊:||2012 19TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)|
|Appears in Collections:||Conferences Paper|