標題: Oxygen sensors made by monolayer graphene
作者: Hung, S. C.
Chen, C. W.
Yang, M. D.
Yeh, C. W.
Wu, C. H.
Chi, G. C.
Ren, F.
Pearton, S. J.
交大名義發表
National Chiao Tung University
公開日期: 1-Jan-2012
摘要: The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O-2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cmx1cm will attach O-2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O-2 concentration and the detection limit of the simple O-2 sensor was 1.25% in volume ratio.
URI: http://dx.doi.org/10.1117/12.907768
http://hdl.handle.net/11536/146315
ISBN: 978-0-81948-911-1
ISSN: 0277-786X
DOI: 10.1117/12.907768
期刊: QUANTUM SENSING AND NANOPHOTONIC DEVICES IX
Volume: 8268
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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