標題: Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar
作者: Wu, Yuh-Renn
Yu, Peichen
Chiu, C. H.
Chang, Cheng-Yu
Kuo, H. C.
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: GaN;InGaN;nanopillar;nanorod;strain relaxation;valence force field model
公開日期: 1-Jan-2008
摘要: We have made a, GaN-based single nanopillar with a, diameter of 300nm using the focused ion beam (FB) technique. The micro-photoluminescence (mu-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a, single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of mu-PL.
URI: http://dx.doi.org/10.1117/12.800658
http://hdl.handle.net/11536/146194
ISBN: 978-0-8194-7278-6
ISSN: 0277-786X
DOI: 10.1117/12.800658
期刊: EIGHTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING
Volume: 7058
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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