標題: Electrically sign-reversible transverse g-factors of holes in droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress
作者: Wu, Yu-Nien
Wu, Ming-Fan
Ou, Ya-Wen
Chou, Ying-Lin
Cheng, Shun-Jen
電子物理學系
Department of Electrophysics
公開日期: 23-Aug-2017
摘要: We present a theoretical investigation of anisotropic g-factor tensors of single holes confined in droplet epitaxial GaAs/AlGaAs quantum dots under electrical and mechanical controls using the gauge-invariant discretization method within the framework of four-band Luttinger-Kohn (k) over right arrow.(p) over right arrow theory. We reveal an intrinsic obstacle to realize the electrical sign reversal of the hole g-factors, being a key condition required for a full spin control in the scheme of g-tensor modulation, for the quantum dots solely with electrical bias control. Constructively, our studies show that, besides electrical gating, slightly stressing an inherently unstrained droplet epitaxial GaAs/AlGaAs quantum dot can offset the transverse hole g-factor to be nearly zero and make the electrical sign reversal of the hole g-factors feasible.
URI: http://dx.doi.org/10.1103/PhysRevB.96.085309
http://hdl.handle.net/11536/145959
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.96.085309
期刊: PHYSICAL REVIEW B
Volume: 96
Issue: 8
起始頁: 0
結束頁: 0
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