標題: Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
作者: Lin, Tzu-Neng
Santiago, Svette Reina Merden
Yuan, Chi-Tsu
Chiu, Kuo-Pin
Shen, Ji-Lin
Wang, Ting-Chun
Kuo, Hao-Chung
Chiu, Ching-Hsueh
Yao, Yung-Chi
Lee, Ya-Ju
光電工程學系
Department of Photonics
公開日期: 2-Aug-2017
摘要: ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.
URI: http://dx.doi.org/10.1038/s41598-017-07483-3
http://hdl.handle.net/11536/145868
ISSN: 2045-2322
DOI: 10.1038/s41598-017-07483-3
期刊: SCIENTIFIC REPORTS
Volume: 7
起始頁: 0
結束頁: 0
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