標題: Atomic-scale epitaxial aluminum film on GaAs substrate
作者: Fan, Yen-Ting
Lo, Ming-Cheng
Wu, Chu-Chun
Chen, Peng-Yu
Wu, Jenq-Shinn
Liang, Chi-Te
Lin, Sheng-Di
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-2017
摘要: Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals. (C) 2017 Author(s).
URI: http://dx.doi.org/10.1063/1.4991435
http://hdl.handle.net/11536/145866
ISSN: 2158-3226
DOI: 10.1063/1.4991435
期刊: AIP ADVANCES
Volume: 7
Issue: 7
起始頁: 0
結束頁: 0
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