標題: Analysis of the Short-Term Response in the Drain Current of a-IGZO TFT to Light Pulses
作者: Liu, H. -W.
Chan, P. -C.
Lin, J. -H.
Chang, C. -Y.
Tai, Y. -H.
電機學院
光電工程學系
College of Electrical and Computer Engineering
Department of Photonics
關鍵字: Amorphous indium gallium zinc oxide (a-IGZO);thin-film transistor (TFT);illumination effect
公開日期: 1-Jul-2017
摘要: In this letter, the response in the drain current (I-D) of the amorphous indium-gallium-zinc oxide thin-film transistors under positive-bias illumination stress is measured with respect to time in less than 5 s under light pulseswith altering frequencies and duty ratios. The curves of I-D under the light pulses are affected by the different defect-reacting rates under illumination and in the dark. By taking the derivative of ID, the trend of the change in the number of defects becomes clear. The total behavior of I-D in response to light pulses can be fairly predicted by the integral of the derivative terms with a correction factor of charge trapping.
URI: http://dx.doi.org/10.1109/LED.2017.2705701
http://hdl.handle.net/11536/145718
ISSN: 0741-3106
DOI: 10.1109/LED.2017.2705701
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 38
起始頁: 887
結束頁: 889
Appears in Collections:Articles