|標題:||Analysis of the Short-Term Response in the Drain Current of a-IGZO TFT to Light Pulses|
|作者:||Liu, H. -W.|
Chan, P. -C.
Lin, J. -H.
Chang, C. -Y.
Tai, Y. -H.
College of Electrical and Computer Engineering
Department of Photonics
|關鍵字:||Amorphous indium gallium zinc oxide (a-IGZO);thin-film transistor (TFT);illumination effect|
|摘要:||In this letter, the response in the drain current (I-D) of the amorphous indium-gallium-zinc oxide thin-film transistors under positive-bias illumination stress is measured with respect to time in less than 5 s under light pulseswith altering frequencies and duty ratios. The curves of I-D under the light pulses are affected by the different defect-reacting rates under illumination and in the dark. By taking the derivative of ID, the trend of the change in the number of defects becomes clear. The total behavior of I-D in response to light pulses can be fairly predicted by the integral of the derivative terms with a correction factor of charge trapping.|
|期刊:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|