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dc.contributor.authorNidhi, Karunaen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2018-08-21T05:54:11Z-
dc.date.available2018-08-21T05:54:11Z-
dc.date.issued2017-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2706423en_US
dc.identifier.urihttp://hdl.handle.net/11536/145635-
dc.description.abstractA novel horizontal n-channel junction field-effect transistor (n-JFET) device is proposed and verified in a 0.25-mu m bulk CMOS process. This horizontal JFET consists of alternating n- and p-regions formed by using the P-type electro-static discharge (ESD) implantation. P-type ESD implantation has been an optional and commonly well supported process step by most of foundries to improve ESD robustness of the I/O devices. Device parameters such as the pinch-off voltage (V-P) and the zero-bias drain current (I-DS0) of the proposed n-JFET device can be modified by adjusting the P+ separation (L) in the layout. With the adjustable pinch-off voltages, this device can be used for different circuit applications. The 2-D device simulations with technology computer aided design are used to analyze the depletion region and to verify the pinch-off voltage under different L values. The pinch-off voltage remains almost unchanged with the temperature variations. In addition, SPICE simulation results show good agreement with the experimental silicon (Si) data in term of I-D-V-D and I-D-V-G.en_US
dc.language.isoen_USen_US
dc.subjectCMOS processen_US
dc.subjectESD implantationen_US
dc.subjectjunction field-effect transistor (JFET)en_US
dc.subjectpinch-off voltage (V-p)en_US
dc.subjectSPICEen_US
dc.subjectzero-bias drain current (I-DS0)en_US
dc.titleA CMOS-Process-Compatible Low-Voltage Junction-FET With Adjustable Pinch-Off Voltageen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2706423en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume64en_US
dc.citation.spage2812en_US
dc.citation.epage2819en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000403452900006en_US
Appears in Collections:Articles