標題: High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
作者: Huang, Chia-Yen
Wu, Pei-Yu
Chang, Kai-Shiang
Lin, Yun-Hsiang
Peng, Wei-Chih
Chang, Yem-Yeu
Li, Jui-Ping
Yen, Hung-Wei
Wu, YewChung Sermon
Miyake, Hideto
Kuo, Hao-Chung
材料科學與工程學系
光電工程學系
光電工程研究所
Department of Materials Science and Engineering
Department of Photonics
Institute of EO Enginerring
公開日期: 1-May-2017
摘要: A high-quality and highly-transparent AlN template was prepared by regrowth on a sputter-deposited AlN buffer layer. The buffer layer was thermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition (MOCVD). The peakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec, respectively, indicating a threading dislocation density <5.0 x 10(8) cm(-2). Dislocations were reduced via grain growth and morphological evolution. The absence of carbon impurity source in sputter deposition also resulted in an improved transparency. According to transmission and reflection measurements, the absorption rate of lambda=280 nm emission propagating through the template was less than 6%. (C) 2017 Author(s).
URI: http://dx.doi.org/10.1063/1.4983708
http://hdl.handle.net/11536/145600
ISSN: 2158-3226
DOI: 10.1063/1.4983708
期刊: AIP ADVANCES
Volume: 7
Issue: 5
起始頁: 0
結束頁: 0
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