|標題:||Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|摘要:||The successful recovery of resistive switching random access memory (RRAM) devices that have undergone switching failure is achieved by introducing a low-temperature supercritical-fluid process that passivates the switching layer. These failed RRAM devices, which are incapable of switching between high-and low-resistance states, were treated with supercritical carbon dioxide with pure water at 120 degrees C for 1 h. After the treatment, the devices became operational again and showed excellent current-voltage (I-V) characteristics and reliability as before. On the basis of the current conduction mechanism fitting results, we propose a model to explain the phenomenon. (C) 2017 The Japan Society of Applied Physics|
|期刊:||APPLIED PHYSICS EXPRESS|
|Appears in Collections:||Articles|