標題: An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors
作者: Tzou, An-Jye
Hsieh, Dan-Hua
Chen, Szu-Hung
Liao, Yu-Kuang
Li, Zhen-Yu
Chang, Chun-Yen
Kuo, Hao-Chung
電子物理學系
電子工程學系及電子研究所
光電工程學系
光電工程研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of EO Enginerring
關鍵字: GaN;high electron mobility transistor (HEMT);current collapse
公開日期: 1-Jun-2016
摘要: This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed I-D under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications.
URI: http://dx.doi.org/10.3390/electronics5020028
http://hdl.handle.net/11536/145528
ISSN: 2079-9292
DOI: 10.3390/electronics5020028
期刊: ELECTRONICS
Volume: 5
Issue: 2
起始頁: 0
結束頁: 0
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