標題: Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme
作者: Cheng, Chuan-An
Huang, Yu-Hsiang
Lin, Chien-Hung
Lee, Chia-Lin
Yang, Shan-Chun
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Three-dimensional integration;temporary bonding;laser release
公開日期: 1-Mar-2017
摘要: A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 degrees C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.
URI: http://dx.doi.org/10.1109/JEDS.2017.2661479
http://hdl.handle.net/11536/145454
ISSN: 2168-6734
DOI: 10.1109/JEDS.2017.2661479
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 5
Issue: 2
起始頁: 136
結束頁: 140
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