標題: A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers
作者: Hsieh, Shang-Hsun
Chen, Ming-Jer
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Interstitial;metal-oxide-semiconductor field-effect transistors (MOSFETs);mobility;neutral defect;scattering;strain
公開日期: 1-Mar-2017
摘要: On the strained silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), we show how to derive a formalism dealing with the scattering of a 2-D electron by a neutral defect. The corresponding neutral defect limited inversion-layer electron mobility, mu(n), is calculated in the momentum relaxation time approximation. The calculated results lead to a new analytical model: mu(n) = cN(n)(-1) where N-n is the neutral defect density per unit area and c is the coefficient independent of the inversion-layer density, the strain, and the temperature. The validity and applicability of the model are confirmed by citing three independent experiments on strained silicon MOSFETs undergoing different implantation sources and different annealing budgets. Importantly, this paper clarifies for the first time that strain will not change neutral defect limited mobility unless changing the neutral defect density. This reasonably explains the two experimental observations during implantation and annealing: 1) the implantation-induced strain relaxation in strained sample does not occur and 2) the neutral defect density is much higher in strained sample than in unstrained sample.
URI: http://dx.doi.org/10.1109/JEDS.2017.2656883
http://hdl.handle.net/11536/145449
ISSN: 2168-6734
DOI: 10.1109/JEDS.2017.2656883
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 5
Issue: 2
起始頁: 101
結束頁: 106
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