標題: AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
作者: Tzou, An-Jye
Chu, Kuo-Hsiung
Lin, I-Feng
Ostreng, Erik
Fang, Yung-Sheng
Wu, Xiao-Peng
Wu, Bo-Wei
Shen, Chang-Hong
Shieh, Jia-Ming
Yeh, Wen-Kuan
Chang, Chun-Yen
Kuo, Hao-Chung
交大名義發表
電機學院
光電工程學系
國際半導體學院
National Chiao Tung University
College of Electrical and Computer Engineering
Department of Photonics
International College of Semiconductor Technology
關鍵字: GaN;High electron mobility transistor (HEMT);Atomic layer deposition (ALD);Current collapse;Surface passivation
公開日期: 27-Apr-2017
摘要: We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 degrees C. The AlN was grown by N-2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H-2/NH3 plasma pretreatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V-DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V-th), corresponding to a 40.2% of current collapse at 150 degrees C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.
URI: http://dx.doi.org/10.1186/s11671-017-2082-0
http://hdl.handle.net/11536/145441
ISSN: 1556-276X
DOI: 10.1186/s11671-017-2082-0
期刊: NANOSCALE RESEARCH LETTERS
Volume: 12
起始頁: 0
結束頁: 0
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