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dc.contributor.authorChen, Bo-Yuanen_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorChiu, Chia-Sungen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2018-08-21T05:53:56Z-
dc.date.available2018-08-21T05:53:56Z-
dc.date.issued2016-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.55.04ER09en_US
dc.identifier.urihttp://hdl.handle.net/11536/145373-
dc.description.abstractThis paper presents the dc and high-frequency performances of laterally diffused metal-oxide-semiconductor (LDMOS) transistors with superjunction (SJ) structures. The SJ-LDMOS transistors were fabricated using a 0.5-mu m CMOS process. By utilizing a modified SJ/RESURF layout (Type I) or a tapered SJ layout (Type II) in our devices, better high-frequency performances and higher breakdown voltages are achieved compared with conventional SJ counterpart, owing to the suppression of the substrate-assisted depletion effect and the reduction of the drain resistance. For Type I device with an optimal SJ layout dimension, the cutoff frequency and the breakdown voltage are 3.7 GHz and 68 V, respectively. For Type II device with a smallest p-pillar width near the drain, they can be enhanced further and reach to 4.9 GHz and 83 V. These experimental results suggest that the SJ-LDMOS can be used in the RF power amplifiers. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleHigh-frequency performances of superjunction laterally diffused metal-oxide-semiconductor transistors for RF power applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.55.04ER09en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume55en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000373929400165en_US
Appears in Collections:Articles