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dc.contributor.authorLi, Hengen_US
dc.contributor.authorCheng, Hui-Yuen_US
dc.contributor.authorChen, Wei-Liangen_US
dc.contributor.authorHuang, Yi-Hsinen_US
dc.contributor.authorLi, Chi-Kangen_US
dc.contributor.authorChang, Chiao-Yunen_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorChang, Yu-Mingen_US
dc.date.accessioned2019-04-03T06:35:59Z-
dc.date.available2019-04-03T06:35:59Z-
dc.date.issued2017-03-30en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep45519en_US
dc.identifier.urihttp://hdl.handle.net/11536/145309-
dc.description.abstractWe performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1-xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the InxGa1-xN/GaN MQWs active layer.en_US
dc.language.isoen_USen_US
dc.titleThree dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep45519en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000398407300001en_US
dc.citation.woscount3en_US
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