標題: Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
作者: Li, Heng
Cheng, Hui-Yu
Chen, Wei-Liang
Huang, Yi-Hsin
Li, Chi-Kang
Chang, Chiao-Yun
Wu, Yuh-Renn
Lu, Tien-Chang
Chang, Yu-Ming
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 30-Mar-2017
摘要: We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1-xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the InxGa1-xN/GaN MQWs active layer.
URI: http://dx.doi.org/10.1038/srep45519
http://hdl.handle.net/11536/145309
ISSN: 2045-2322
DOI: 10.1038/srep45519
期刊: SCIENTIFIC REPORTS
Volume: 7
起始頁: 0
結束頁: 0
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