標題: Improving Safe-Operating-Area o f a 5-V n-Channel Large Array MOSFET in a 0.15-mu m BCD Process
作者: Nidhi, Karuna
Ker, Ming-Dou
Lin, Tingyou
Lee, Jian-Hsing
資訊工程學系
電子工程學系及電子研究所
Department of Computer Science
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrical-SOA (E-SOA);large array device (LAD);safe-operating-area (SOA);thermal-SOA (T-SOA);transmission line pulsing (TLP)
公開日期: 1-Jul-2018
摘要: The safe-operating-area (SOA) of large array device (LAD) is one of the most important factors affecting the device reliability. In this paper, the improvement of the electrical-SOA (E-SOA) and the thermal-SOA (T-SOA) by using an optional implantation layer for 5-V n-channel large array MOSFET has been investigated in a 0.15-mu m bipolar-CMOS-DMOS process. Experimental results showed that the secondary breakdown current (It2) is improved by 5 times, and a significant improvement is also observed in the E-SOA and the T-SOA boundary as compared to the original device. In addition, the impact of inserting additional layout pick-ups into the multiple-finger layout of large array MOSFET to the E-SOA, It2, and trigger voltage is also practically investigated in silicon for the LAD with a total width of 12000 mu m.
URI: http://dx.doi.org/10.1109/TED.2018.2838545
http://hdl.handle.net/11536/145149
ISSN: 0018-9383
DOI: 10.1109/TED.2018.2838545
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 65
起始頁: 2948
結束頁: 2956
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