標題: The dynamics of thermal annealing in arsenic-ion-implanted GaAs
作者: Chen, WC
Lin, GR
Chang, CS
交大名義發表
光電工程學系
National Chiao Tung University
Department of Photonics
關鍵字: arsenic-ion-implanted;GaAs;deep level transient spectroscopy;temperature-dependent resistance;transmission electron microscopy
公開日期: 15-二月-1996
摘要: The effect of thermal annealing on the surfaces of arsenic-ion-implanted GaAs has been investigated by transmission electron microscopy, deep level transient spectroscopy and temperature-dependent resistance measurements. For the annealed films of arsenic-ion-implanted GaAs arsenic precipitates and a band of deep-level defects with the activation energy of around 0.6 eV near the surface are observed. The mean size and concentration of As precipitates in samples implanted at a dosage of 10(16) cm(-2) are about 2-3 nm and 7 x 10(16) cm(-3), respectively. The cross section of the deep level defects near the surface is calculated to be 7 x 10(-14) cm(2). The carrier-transport mechanisms of both as-implanted GaAs and post-annealed GaAs are shown dominantly to be hopping type conduction and active type conduction, respectively.
URI: http://dx.doi.org/10.1143/JJAP.35.L192
http://hdl.handle.net/11536/1450
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.L192
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 35
Issue: 2B
起始頁: L192
結束頁: L194
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UE24300002.pdf