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dc.contributor.authorSantiago, Svette Reina Merdenen_US
dc.contributor.authorCaigas, Septem P.en_US
dc.contributor.authorLin, Tzu-Nengen_US
dc.contributor.authorYuan, Chi-Tsuen_US
dc.contributor.authorShen, Ji-Linen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2018-08-21T05:53:38Z-
dc.date.available2018-08-21T05:53:38Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c7ra13108aen_US
dc.identifier.urihttp://hdl.handle.net/11536/144960-
dc.description.abstractWe propose a tunnel-injection structure, in which WS2 quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS2-QD injector to the InGaN-QW emitter. The tunneling time has been extracted from the time-resolved PL, which increases as the barrier thickness is increased. The dependence of the tunneling time on the barrier thickness is in good agreement with the prediction of the semiclassical Wentzel-Kramers-Brillouin model, confirming the mechanism of the tunnel injection between WS2 QDs and InGaN QWs.en_US
dc.language.isoen_USen_US
dc.titleTunnel injection from WS2 quantum dots to InGaN/GaN quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c7ra13108aen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume8en_US
dc.citation.spage15399en_US
dc.citation.epage15404en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000431813800017en_US
Appears in Collections:Articles