標題: Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD
作者: Luong, Tien Tung
Ho, Yen-Teng
Wong, Yuen-Yee
Chang, Shane
Chang, Edward-Yi
材料科學與工程學系
電機學院
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
關鍵字: AIGaN;Phase separation;AIN interlayer;Strain modulation;AIGaN/GaN HEMTs
公開日期: 1-Apr-2018
摘要: High crystalline quality AIGaN films were grown on GaN templates by metalorganic chemical vapor deposition (MOCVD). Inhomogeneous distributions of Al compositions in both the vertical and lateral growth direction caused by the strong gas-phase pre-reaction occurring between Al precursors and NH3 were suppressed by optimizing the growth conditions. The residual strain in AIGaN/GaN induced by lattice mismatch, which results in the degradation of crystallinity, was modulated by varying thickness of a high temperature (HT) AIN interlayer (IL) inserted between AIGaN and GaN layers. Both the crystalline quality and Al-incorporation into the AIGaN are influenced by the residual strain related to the AIN IL thickness. Lastly, the understanding of the AIGaN growth and of the strain modification was employed to grow an AIGaN/GaN HEMT structure showing good electrical characteristics and uniformity. (C) 2017 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2017.07.021
http://hdl.handle.net/11536/144905
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2017.07.021
期刊: MICROELECTRONICS RELIABILITY
Volume: 83
起始頁: 286
結束頁: 292
Appears in Collections:Articles