|標題:||The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor|
|作者:||Fan, C. C.|
Chiu, Y. C.
Lai, W. W.
Cheng, C. H.
Lin, D. L.
Li, G. R.
Lo, Y. H.
Chang, C. W.
Tsai, C. C.
Chang, C. Y.
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Flicker Noise;Low-Frequency Noise;Shallow-Trench Isolation (STI);Subthreshold Swing|
|摘要:||The flicker noise of source follower transistors is the dominant noise source in image sensors. This paper reports a systematic study of the shallow trench isolation effect in transistors with different sizes under high temperature conditions that correspond to the quantity of empty defect sites. The effects of shallow trench isolation sidewall defects on flicker noise characteristics are investigated. In addition, the low-frequency noise and subthreshold swing degrade simultaneously in accordance to the device gate width scaling. Both serious subthreshold leakage and considerable noise can be attributed to the high trap density near the STI edge. Consequently, we propose a coincidental relationship between the noise level and the subthreshold characteristic; its trend is identical to the experiments and simulation results.|
|期刊:||JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY|
|Appears in Collections:||Articles|