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dc.contributor.authorZyoud, Aheden_US
dc.contributor.authorMurtada, Khaleden_US
dc.contributor.authorKwon, Hansangen_US
dc.contributor.authorChoi, Hyun-Jongen_US
dc.contributor.authorKim, Tae Wooen_US
dc.contributor.authorHelal, Mohammed H. S.en_US
dc.contributor.authorFaroun, Maryamen_US
dc.contributor.authorBsharat, Hebaen_US
dc.contributor.authorPark, DaeHoonen_US
dc.contributor.authorHilal, Hikmat S.en_US
dc.date.accessioned2018-08-21T05:53:06Z-
dc.date.available2018-08-21T05:53:06Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn1293-2558en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solidstatesciences.2017.11.013en_US
dc.identifier.urihttp://hdl.handle.net/11536/144270-
dc.description.abstractCopper selenide (of the type Cu2-xSe) film electrodes, prepared by combined electrochemical (ECD) followed by chemical bath deposition (CBD), may yield high photo-electrochemical (PEC) conversion efficiency (similar to 14.6%) with no further treatment. The new ECD/CBD-copper selenide film electrodes show enhanced PEC characteristics and exhibit high stability under PEC conditions, compared to the ECD or the CBD films deposited separately. The electrodes combine the advantages of both ECD-copper selenide electrodes (in terms of good adherence to FTO surface and high surface uniformity) and CBD-copper selenide electrodes (suitable film thickness). Effect of annealing temperature, on the ECD/CBD film electrode composition and efficiency, is discussed. (C) 2017 Elsevier Masson SAS. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCopper selenide filmsen_US
dc.subjectCombined electrochemical & chemical bath depositionsen_US
dc.subjectPECen_US
dc.subjectEnhanced stability and conversion efficiencyen_US
dc.titleCopper selenide film electrodes prepared by combined electrochemical/chemical bath depositions with high photo-electrochemical conversion efficiency and stabilityen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solidstatesciences.2017.11.013en_US
dc.identifier.journalSOLID STATE SCIENCESen_US
dc.citation.volume75en_US
dc.citation.spage53en_US
dc.citation.epage62en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000418566200009en_US
Appears in Collections:Articles