標題: Electromigration Mechanism of Failure in Flip-Chip Solder Joints Based on Discrete Void Formation
作者: Chang, Yuan-Wei
Cheng, Yin
Helfen, Lukas
Xu, Feng
Tian, Tian
Scheel, Mario
Di Michiel, Marco
Chen, Chih
Tu, King-Ning
Baumbach, Tilo
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 20-Dec-2017
摘要: In this investigation, SnAgCu and SN100C solders were electromigration (EM) tested, and the 3D laminography imaging technique was employed for in-situ observation of the microstructure evolution during testing. We found that discrete voids nucleate, grow and coalesce along the intermetallic compound/solder interface during EM testing. A systematic analysis yields quantitative information on the number, volume, and growth rate of voids, and the EM parameter of DZ*. We observe that fast intrinsic diffusion in SnAgCu solder causes void growth and coalescence, while in the SN100C solder this coalescence was not significant. To deduce the current density distribution, finite-element models were constructed on the basis of the laminography images. The discrete voids do not change the global current density distribution, but they induce the local current crowding around the voids: this local current crowding enhances the lateral void growth and coalescence. The correlation between the current density and the probability of void formation indicates that a threshold current density exists for the activation of void formation. There is a significant increase in the probability of void formation when the current density exceeds half of the maximum value.
URI: http://dx.doi.org/10.1038/s41598-017-06250-8
http://hdl.handle.net/11536/144262
ISSN: 2045-2322
DOI: 10.1038/s41598-017-06250-8
期刊: SCIENTIFIC REPORTS
Volume: 7
起始頁: 0
結束頁: 0
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