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dc.contributor.authorYu, Ing-Songen_US
dc.contributor.authorCheng, Hsyi-Enen_US
dc.contributor.authorChang, Chun-Chiehen_US
dc.contributor.authorLin, Yan-Weien_US
dc.contributor.authorChen, Hou-Tongen_US
dc.contributor.authorWang, Yao-Chinen_US
dc.contributor.authorYang, Zu-Poen_US
dc.date.accessioned2019-04-03T06:36:28Z-
dc.date.available2019-04-03T06:36:28Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn2159-3930en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OME.7.000777en_US
dc.identifier.urihttp://hdl.handle.net/11536/144220-
dc.description.abstractThe plasmonic properties of titanium nitride (TiN) films depend on the type of substrate when using typical deposition methods such as sputtering. Here we show atomic layer deposition (ALD) of TiN films with very weak dependence of plasmonic properties on the substrate, which also suggests the prediction and evaluation of plasmonic performance of TiN nanostructures on arbitrary substrates under a given deposition condition. Our results also observe that substrates with more nitrogen-terminated (N-terminated) surfaces will have significant impact on the deposition rate as well as the film plasmonic properties. We further illustrate that the plasmonic properties of ALD TiN films can be tailored by simply adjusting the deposition and/or post-deposition annealing temperatures. Such characteristics and the capability of conformal coating make ALD TiN films on templates ideal for applications that require the fabrication of complex 3D plasmonic nanostructures. (C) 2017 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleSubstrate-insensitive atomic layer deposition of plasmonic titanium nitride filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OME.7.000777en_US
dc.identifier.journalOPTICAL MATERIALS EXPRESSen_US
dc.citation.volume7en_US
dc.citation.issue3en_US
dc.citation.spage777en_US
dc.citation.epage784en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000395672700013en_US
dc.citation.woscount2en_US
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