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dc.contributor.authorTseng, Yi-Tingen_US
dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorShih, Chih-Chengen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorYang, Cheng-Chien_US
dc.contributor.authorLin, Chih-Yangen_US
dc.contributor.authorWu, Cheng-Hsienen_US
dc.contributor.authorZheng, Hao-Xuanen_US
dc.contributor.authorZhang, Shengdongen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2018-08-21T05:53:02Z-
dc.date.available2018-08-21T05:53:02Z-
dc.date.issued2017-09-01en_US
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/aelm.201700171en_US
dc.identifier.urihttp://hdl.handle.net/11536/144197-
dc.description.abstractIn this study, the rising forming voltage issue during device cell scale-down in resistance random access memory (RRAM) is solved by introducing new high-permittivity (high-k) material as the side-wall spacer structure, unlike the normally used low-permittivity (low-k) material. Simulated electrical fields based on COMSOL Multiphysics software results suggest a RRAM device with a high-k spacer effectively confines the electric field. The effects of this confined electric field are notable, especially when the device cell is scaled down. The device fabrication process is modified to incorporate the high-k sidewall. Cross-sectional transmission electron microscopy imaging confirms the existence of SiO2 and HfO2 as the spacer structures in two different devices. Electrical measurements of forming voltages ranging from 1 to 0.16 mu m(2) are conducted to verify the effects. Statistical measurements confirm that the forming voltages of the devices with high-k material as sidewall do not increase with a reduction in device cell size. Moreover, reliability tests, including endurance and retention for the high-k sidewall device, also exhibit very stable resistance switching characteristics. As a result, the structure that is proposed successfully solves the forming voltage issues within small device cells in RRAM without any cost to device reliability.en_US
dc.language.isoen_USen_US
dc.subjectdevice scalingen_US
dc.subjectforming voltageen_US
dc.subjectresistive random access memory (RRAM)en_US
dc.subjectspacer structuresen_US
dc.titleSolving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/aelm.201700171en_US
dc.identifier.journalADVANCED ELECTRONIC MATERIALSen_US
dc.citation.volume3en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000417408700005en_US
Appears in Collections:Articles