標題: On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
作者: Li, Luping
Zhang, Yonghui
Xu, Shu
Bi, Wengang
Zhang, Zi-Hui
Kuo, Hao-Chung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: III-nitride semiconductor;multiple quantum well;light-emitting diode;hole injection efficiency;external quantum efficiency;internal quantum efficiency
公開日期: 1-Oct-2017
摘要: The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.
URI: http://dx.doi.org/10.3390/ma10101221
http://hdl.handle.net/11536/144043
ISSN: 1996-1944
DOI: 10.3390/ma10101221
期刊: MATERIALS
Volume: 10
Issue: 10
起始頁: 0
結束頁: 0
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