|標題:||On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes|
Department of Photonics
Institute of EO Enginerring
|關鍵字:||III-nitride semiconductor;multiple quantum well;light-emitting diode;hole injection efficiency;external quantum efficiency;internal quantum efficiency|
|摘要:||The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.|
|Appears in Collections:||Articles|
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.