標題: Field enhancement of electronic conductance at ferroelectric domain walls
作者: Vasudevan, Rama K.
Cao, Ye
Laanait, Nouamane
Ievlev, Anton
Li, Linglong
Yang, Jan-Chi
Chu, Ying-Hao
Chen, Long-Qing
Kalinin, Sergei V.
Maksymovych, Petro
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 6-Nov-2017
摘要: Ferroelectric domain walls have continued to attract widespread attention due to both the novelty of the phenomena observed and the ability to reliably pattern them in nanoscale dimensions. However, the conductivity mechanisms remain in debate, particularly around nominally uncharged walls. Here, we posit a conduction mechanism relying on field-modification effect from polarization re-orientation and the structure of the reverse-domain nucleus. Through conductive atomic force microscopy measurements on an ultra-thin (001) BiFeO3 thin film, in combination with phase-field simulations, we show that the field-induced twisted domain nucleus formed at domain walls results in local-field enhancement around the region of the atomic force microscope tip. In conjunction with slight barrier lowering, these two effects are sufficient to explain the observed emission current distribution. These results suggest that different electronic properties at domain walls are not necessary to observe localized enhancement in domain wall currents.
URI: http://dx.doi.org/10.1038/s41467-017-01334-5
http://hdl.handle.net/11536/144032
ISSN: 2041-1723
DOI: 10.1038/s41467-017-01334-5
期刊: NATURE COMMUNICATIONS
Volume: 8
起始頁: 0
結束頁: 0
Appears in Collections:Articles


Files in This Item:

  1. 29643bc97f0c2f5a630b8d9f44c31334.pdf